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| NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 40V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 1A IC = 4A, IB = 400mA IC = 4A, IB = 400mA Min - - 30 25 - - - 200 60 6 - Typ - - - - 10 0.5 - - - - 0.2 Max 0.1 0.1 60 - - 1.0 1.5 - - - 0.5 MHz V V V V V s Unit mA mA V(BR)CBO IC = 5mA, IE = 0 V(BR)EBO IC = 5mA, IC = 0 tf VCC = 50V, VBB = 5V, IC = 5A, IB1 = -IB2 = 500mA, PW = 20s, Duty Cycle 2.5% Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = .402 (10.2) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) .669 (17.0) Max .165 (4.2) .173 (4.4) Max .114 (2.9) Max B C E .531 (13.5) Min .100 (2.54) .059 (1.5) Max NOTE: Tab is isolated |
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